Investigations of Ge Ions and Damage Profiles of Axial-implanted <100> Zinc Blende GaAs Using SIMS and RBS Techniques Imam Rofii1), a), b), Misto1), Edy Supriyanto1), Sujito1), and Mutmainnah1)
Authors Affiliation
1) Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA),
University of Jember, Jl. Kalimantan, 37, Kampus Tegalboto,
Jember, East Java, Indonesia, 68121
Author Emails
a) Corresponding author: imr.rofii.fmipa[at]unej.ac.id
b) imr.rofii[at]gmail.com
Abstract
In this report, SIMS and RBS techniques were used for determinations of germanium ion and damage profiles of germanium ion implanted into <100> Zinc Blende GaAs. During the ion implantation processes, energetic germanium ion beams were bombarded on the surface of semi insulating intrinsic zinc blende GaAs sample. In theise processes, germanium ion beam entered the zinc blende GaAs crystal structure and underwent multiple scattering with the atomic hosts (Ga and As ions) before stopping. At the stopping points, these germanium ions can stay in the GaAs crystal unit cells by replacing either Ga or As host ions. If the germanium ions stay in the Ga ion positions, the Ge ions would act as donor ions. Otherwise if its stay in the As ion positions, the Ge ions would act as acceptor ions. Germanium profiles on these ion implanted GaAs samples were then analyzed and determined by means of Secondary Ion Mass Spectrometry (SIMS). During this SIMS analyses, energetic argon ion plasma was bombarded into the implanted GaAs sample for obtaining either secondary germanium ions and clusters which were then detected using the SIMS ion detector. The count number of germanium ions and clusters detected and collected in the SIMS detectors at every time represented the germanium concentration at every corresponding depth inside the implanted GaAs samples. These SIMS accounts represent the count number of germanium ion as a function of depth measured from the surface of the implanted GaAs sample. During the implantation, germanium ion beam doses were varied to observe the effect of germanium ion beam on the germanium ion profiles on the GaAs samples. The SIMS results were also compared with RBS channeling analysis. The results indicated that SIMS and RBS spectra were directly proportional to the germanium ion beam doses.
