Optical Properties of Carbon Dopped MoS2
Azrul Kiromil Enri Auni1, Indris Sarihon Sianturi1, Aljufri Hadju1, Jessie Manopo1, Fahdzi Muttaqien2,3, Yudi Darma1 *

1 Physics of Materials Electronics Research Group, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Ganesha 10, Bandung, 40132, Indonesia
2 Instrumentation and Computational Physics Research Group, Department of Physics, Institut Teknologi Bandung, Jalan Ganesha No.10, Bandung, West Java 40132, Indonesia
3 Master Program in Computational Science, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesha No.10, Bandung, West Java 40132, Indonesia
*E-mail: yudi[at]itb.ac.id

Abstract

We study the optical properties of Carbon dopped (C-dopped) MoS2 by means of density functional theory and spectroscopic ellipsometry. Our theoretical model is a hexagonal type MoS2 (h-MoS2) with lattice parameters of a=3.189 A and c=12.384 A which are consistent with the experimental results. The calculated bandgap energy of pure h-MoS2 is 0.89 eV, while C-dopped h-MoS2 has lower bandgap energy, 0.17 eV. The carbon atoms is responsible for the reduced bandgap energy in the C-dopped h-MoS2 system. Furthermore, the dopant atom also shifts the peak of imaginary part of dielectric function from 1.90 eV to 0.27 eV, indicating the C-dopped h-MoS2 has wider optical absorption range. Experimentally, we fabricate the h-MoS2 with and without carbon doping using DC-Unbalanced Magnetron Sputtering at room temperature on SiO2/Si. These h-MoS2 systems have been characterized using XRD, SEM and EDX. The optical properties of pure h-MoS2 and C-doped h-MoS2 systems are being studied using spectroscopic ellipsometry and UV-Vis analysis. This research is very important to understand the effect of carbon doping on MoS2 and explore its potential application for future devices. Later

Keywords: MoS2- carbon doping- optical properties- DFT- sputtering

Topic: CHEMISTRY AND MATERIAL SCIENCES