Band gap analysis of CNTs made with varied CH4 flow rates using the HWC-in plasma-VHF-PECVD method for solar cell applications K Abidin, A. C. Keintjem, J D Malago, F A Noor, T Winata
Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung, Indonesia.
Abstract
This study focused on analyzing the energy gap of carbon nanotubes (CNTs) using SEM and UV-VIS characterization. CNTs were grown using the HWC-in plasma-VHF-PECVD method with varied of CH4 flow rates. The substrate of CNT growth was a glass slide prepared with an Ag catalyst. The Ag catalyst was deposited using thermal vacuum evaporation. Based on the SEM characterization, the CNT growtn with a CH4 flow rate of 30 sccm had the smallest energy gap. However, the UV-VIS spectral data showed that the CNT formed with a CH4 flow rate of 30 sccm had the largest band gap. In the UV-VIS analysis, the energy gap decreased with increasing CH4 flow rate. The CNTs formed using this HWC-in plasma-PECVD method were semiconductor CNTs that grew with base growth mode
