Graphene Growth Effort at Low Temperature by Using Hot Wire-Very High Frequency-Plasma Enhanced Chemical Vapor Deposition A Momang Yusuf(a, b), Kurniati A. (a), Ajeng E. (a), Jasruddin D. Malago (b), Fatimah A. Noor (a), Toto Winata (a*)
a) Physics of Electronics Materials Research Group,
Bandung Institute of Technology
Jl. Ganesa 10, Bandung 40132, Indonesia
*toto[at]fi.itb.ac.id
b) Physics Department,
Mathematics and Natural Science Faculty,
Universitas Negeri Makassar
Jl. Mallengkeri, Makassar, Indonesia
Abstract
We have attempted to grow graphene by using plasma enhanced chemical vapor deposition (PECVD) combined with hot wire (HW). Plasma was generated by Radio Frequency (RF) at Very High Frequency of 70 MHz. Raman spectra of the samples show that graphitic structure had been formed as indicated by sharp G band, followed by sharp D band which indicate that the samples highly contain disorder structure. However, the indistinct of 2D band from Raman spectra suggest that the obtained samples were graphite film which is many layers graphene. This result suggest that growth parameters still need to be optimized further to obtain high quality graphene which contain less than ten layers.
