THE SIMULATION OF DEEP TRENCHES ETCHED SILICON PN JUNCTION BASED BETAVOLTAIC USING Ni-63 RADIOISOTOPE SOURCE Swastya Rahastama(1), Abdul Waris (2), Ferry Iskandar (2), Sparisoma Viridi (2)
(1) Institut Teknologi Kalimantan
(2) Institut Teknologi Bandung
Abstract
In basic planar betavoltaic structure, some of beta particles are not utilized effectively to generate electron-hole pairs inside the semicondutor. In order to improve the utilization of beta source that would be deposited at the surface of the battery, we proposed the deep trenches design and calculated the prediction model of its electrical performance using finite difference minority carrier diffusion equation (FD-MCDE). The deep trenches p-n junction was evaluated by dividing it into several regions according to the energy deposition profile at each cell. Herein, we employ Ni-63 radioisotope as the beta source coupled with silicon semiconductor. In comparison to the basic planar design, the deep trenches could give an overall improvement in electrical performance, which the maximum power density and conversion efficiency can be increased about 29.60%.
Keywords: betavoltaic, deep trenches, silicon, Ni-63
